发明名称 Method for use in brazing an interconnect pin to a metallization pattern situated on a brittle dielectric substrate
摘要 A method for use in brazing an interconnect pin to a portion of metallization pattern (e.g. a pad) existing on a brittle dielectric substrate, such as a multi-layered ceramic (MLC) substrate, is disclosed. A dielectric layer is formed with appropriate annular openings. Each opening provides a closed containment wall, which extends around and above the pad, to hold the brazing alloy. Each circular containment wall is concentrically aligned with its associated pad and exposes an area, of each pad, having a smaller diameter than that of the entire pad. The containment walls serve to prevent the brazing alloy from coming into contact with any edge of the pads.
申请公布号 US4672739(A) 申请公布日期 1987.06.16
申请号 US19850721885 申请日期 1985.04.11
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHURCHWELL, ROBERT W.;FLAITZ, PHILIP L.;HUMENIK, JAMES N.
分类号 H01L23/50;H01L21/48;H01R12/04;H05K3/34;(IPC1-7):H01L21/88 主分类号 H01L23/50
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