| 摘要 |
A charge pump for providing programming voltages to the word lines of a semiconductor memory array is disclosed. The charge pump, configured as a combination of enhancement and native MOS transistors, prevents DC current from flowing from the source of the programming voltage to ground through unselected word lines, and thereby permits the design of semiconductor programmable memory arrays having on-chip programming voltage generation, allowing for design of semiconductor programmable memory arrays which operate from a single voltage power supply.
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