发明名称 ION IMPLANTATION DEVICE
摘要 PURPOSE:To suppress temperature rise and charging on a wafer, by providing an earth electrode and an expander electrode on the path of an ion beam from a mass spectrometry electromagnet. CONSTITUTION:An expander electrode 16 is provide on the path of an ion beam 4 between a spectrometry slits 8 as two earth electrodes and a mask 10. The ion beam 4 subjected to-mass spectrometry by both the mass spectrometry electromagnet 6 and the spectrometry slits 8 is diversed by receiving a static electrical force namely due to the lens effect of the static electrical field during the process of passing from the spectrometry slits 8, to the mask 10 through the expander electrode 16 having a positive potential in respect to the earth. In this process, by adjusting the voltage applied to the expander electrode 16 from a DC regulated power supply 18 in accordance with the energy of the ion beam 4, the spectrometry slits 8, and the arrangement of the mask 10 and the expander electrode 16, the diversing angle of the ion beam 4 radiated to the wafer 12, or the cross sectional area of the ion beam 4 can be adjusted.
申请公布号 JPS62133662(A) 申请公布日期 1987.06.16
申请号 JP19850272819 申请日期 1985.12.04
申请人 NISSIN ELECTRIC CO LTD 发明人 NISHIKAWA KAZUHIRO;NAITO KATSUO
分类号 H01L21/265;H01J37/317 主分类号 H01L21/265
代理机构 代理人
主权项
地址