| 摘要 |
PURPOSE:The elements constituting the objective compound semiconductor are alternately fed on the base crystal and monolayers are adsorbed, respectively, then all of constituent elements are simultaneously fed to effect crystal growth whereby epitaxial growth layers of good mirror surfaces are obtained. CONSTITUTION:The source boat 5 is placed at the upperstream of the upper reaction chamber 4 and the base crystal 8 is placed in the lower reaction chamber 7. Then, the base crystal 8 in the reaction chamber 4 is heated, while the elements constituting the objective compound semiconductor or gases containing these elements are fed on the base crystal to form monolayers of these elements. Then, the base crystal 8 is transferred in the reaction chamber 4 and the other constituting elements or gases containing the same are fed. These operations are repeated to form alternate monolayers of the elements constituting the conductors, resulting in the epitaxial growth of a compound semiconductor as a whole. Then, the base crystal 8 is transferred in the reaction chamber 7 and all constituting elements or gases containing them are simultaneously fed to effect epitaxial growth.
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