| 摘要 |
PURPOSE:To obtain a uniform cross section of a silicon wafer, by anisotropically etching the silicon wafer to form a uniform surface while employing the photolithography technique to form that face at a required position. CONSTITUTION:Protection films 4 highly resistive to alkali liquids are provided on the top and bottom faces of a silicon wafer 1. The protection film 4 on the bottom face is patterned while it is adjusted with an integrated circuit in their relative position. The silicon wafer 1 is then anisotropically etched with an alkali etching solution while the protection film 4 is used as a mask, so that a through-hole having a uniform surface is formed. Thereby, a cross section as required is obtained. In this manner, a uniform cross section of the silicon wafer 1 can be obtained.
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