| 摘要 |
PURPOSE:To cut down the power consumption of non-volatile semiconductor memory element by a method wherein a switching means is connected in series with resistors between an outer power supply and connecting points to be turned OFF during the standby time of a memory part. CONSTITUTION:The drain terminal of FET 3 is connected to an outer power supply while the drain terminal of the same is connected to the other end of a resistor 1. A driving circuit 4 outputs high level signals during operation time of a memory array M while low level signals during standby time thereof. A switching means is composed of the FET 3 and the driving circuit 4. Resultantly, the FET 3 becomes non-conductive state supplying the resistors 1, 2 with no current at all since the driving circuit 4 outputs the low level signals during the standby time of memory array M.
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