| 摘要 |
PURPOSE:To measure respective luminescence values independently or at the same time by measuring the spectrum and intensity of light generated by irradiating semiconductor crystal with an electron beam and a laser beam. CONSTITUTION:A vacuum container 1 is evacuated to a high degree by using an evacuation system 2. Then, the electron beam from an electron gun 3 is converged by an electron beam optical system 4 and an objective 5 to illuminate the sample 7 placed on a moving cooling base 6. Further, a semiconductor laser 9 arranged under the vacuum is used to generate the laser beam, which is converted by a laser beam convergence system 11 to illuminate the sample 7 after being passed under the lens 5 through a mirror 12. Luminescence generat ed by the sample 7 irradiated with those electron beam and laser beam is guided out to the air through a luminescence convergence system 13 and an optical window 14. Then the luminescence is made incident on a spectroscope 16 through an optical system 15 for convergence to detect luminescence of specific wavelength by a detector 17 and a luminescence signal processing system 18 is used to measure its intensity and output data on it.
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