| 摘要 |
PURPOSE:To obtain a Cu alloy for the lead of a semiconductor device having superior characteristics such as superior electric conductivity, heat conductivity, heat resistance, workability, adhesion to plating, solderability, corrosion resistance and strength by specifying a composition consisting of Cr, Zr, In and Cu. CONSTITUTION:This Cu alloy consists of 0.05-1.5wt% Cr, 0.02-<0.5wt% Zr, 0.02-0.3wt% In and the balance Cu with inevitable impurities or further contains 0.01-1.0wt% one or more among Mg, Mn, Si, Al, B, Zn, Ti, As, Fe and P as secondary components. The Cu alloy has various characteristics suitable for use as a material for the lead of a semiconductor device.
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