| 摘要 |
<p>A semiconductor device having a SOI structure comprises an insular single crystal silicon body (33) formed on an insulator layer (32), a first region (36) of a first type semiconductor and source and drain regions (34,35) of a second type semiconductor provided in the insular single crystal silicon body so that the first region is provided between the source and drain regions, a second region (39a, 39b) of the first type semiconductor in contact with the first region (36) and formed at least along a side of the source and drain regions, and a contact region (40) of the first type semiconductor having an impurity density higher than those of the first and second regions (36,39a,39b) and formed in contact with the second region, so that a fixed voltage can be applied to the first region (36) via the contact region (40). </p> |
