| 摘要 |
1,216,618. Semi-conductor devices. ITT INDUSTRIES Inc. 5 Aug., 1969 [12 Aug., 1968], No. 39087/69. Heading H1K. A method of manufacturing a Zener diode having an alloyed aluminium-silicon junction 11 comprises depositing a layer 7 of silicon nitride over the surface of an N-type conductivity silicon wafer 6, etching a window in this layer and depositing overall a layer 9 of aluminium, then heating to alloy the aluminium into the silicon through the window to form a P-type conductivity regrowth region 10. A plurality of such devices can be formed in one wafer, in' which case after the alloying step aluminium is removed from parts of the surface to leave a pattern of terminals and interconnecting strips. In a further embodiment, Fig. 6, not shown, a P-type conductivity region is formed initially in a silicon wafer through a window in a silicon dioxide masking layer, then a silicon nitride layer is formed overall having an aperture at the position of the window in the silicon dioxide layer and aluminium is deposited arid alloyed as before. |
