| 摘要 |
PURPOSE:To reduce pattern size error due to an approach effect by executing correction irradiation in a form of surrounding a prescribed pattern at least one time before or after the exposure of a resist. CONSTITUTION:Each of hatched regions 303 of A, B, and C is exposed to electron beams D0 necessary for pattern formation, then, all of the B' region is uniformly exposed by using a correction pattern 304 in an irradiation quantity of 50% of electron beams D0. Further, all of the C' region is uniformly exposed by using a correction pattern 305 in an irradiation quantity of 80% of electron beams D0, thus permitting the dimensional error of the pattern due to approach effect to be reduced to + or -0.02mum, and a variation quantity of 0.5mum pattern size to be regulated within + or -10%. |
