| 摘要 |
PURPOSE:To form an excellent vapor-deposited layer on a material to be vapor- deposited by melting firstly the metal in a melting pot, removing the impurities in the molten metal by gassification, and supplying the obtained clean molten metal to the evaporation part of a vapor deposition apparatus. CONSTITUTION:An Al wire 4 is firstly supplied into a ceramic melting pot 7, heated and melted with a heater 8 to obtain a molten material of a metal to be vapor-deposited such as Al which is supplied into an evaporation part 2 in a vacuum chamber 1 of a vapor deposition apparatus from an outlet 10 of the pot 7 as the molten material 3. In this case, the amt. of the Al wire to be melted in the pot 7 per unit time is made larger than the amt. flowing out into the evaporation part 2 from the outlet 10 to retain molten Al 3a temporarily in the pot. During the retention time, the impurities in the molten Al 3a is evaporated and discharged, and the molten Al 3 in the evaporation part 2 is free from impurities. Accordingly, the bumping in the molten Al 3 by air bubbles is eliminated, and the formation of pinholes in the vapor-deposited layer can be prevented. The excellent-quality Al vapor-deposited layer is obtained in this way. |
