| 摘要 |
PURPOSE:To obtain an image high in processing precision without using RIE by coating a base with a UV sensitive resist, laminating an electrified corpuscular beam sensitive resist on it, patternwise exposing it to said beams, irradiating UV rays on the whole surface, and exposing a flattened layer to light through the pattern of the electrified corpuscular beam sensitive resist to transfer the pattern. CONSTITUTION:The base 1 having a relief is coated with a positive type photoresist 2, then baked, again coated with PMMA 6 containing coumarin as an absorbing dye in an amount of 1-10wt%, likewise baked, then, exposed to electron beams, and developed with methyl isobutyl ketone to obtain a resist pattern 7. UV rays 8 are irradiated to expose the lower layer photoresist 2 through the pattern 7, and the photoresist pattern 9 is obtained by immersing the pattern 7 and the resist 2 in an organic alkaline developing solution. |
