| 摘要 |
A method of recrystallizing a region (3) of a nonmonocrystalline conductive layer (2), comprising:- forming a thermal-conduction-controlling layer (5) above the nonmonocrystalline layer (the latter being, for example, of polysilicon or amorphous aluminum), the thermal-conduction-controlling layer having a portion (4) of increased thickness above and corresponding to the said region of the nonmonocrystalline conductive layer, so as to provide greater thermal resistance at that portion that is provided by surrounding portions; forming an energy-absorbing cap layer (6) above the thermal-conduction-controlling layer; and irradiating the energy absorbing cap layer with an energy beam (7); the energy-absorbing cap layer absorbing energy from the beam and, as a result, heating up, the thermal-conduction-controlling layer conducting heat from the cap layer to the nonmonocrystalline layer in a selective fashion owing to the presence of the increased-thickness portion, such that material of the nonmonocrystalline layer in the said region is melted and provided with a temperature distribution such that it recrystallizes, on cooling, in a grain-boundary-free condition
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