| 摘要 |
PURPOSE:To set arbitrary output voltage by utilizing a difference betwen the threshold voltage of two MOS transistors and arbitrarily setting drain currents and gate length. CONSTITUTION:The titled generator is constituted by an N<+> gate MOS transistor, in which phosphorus is doped to a gate layer in high concentration, an N<-> region, in which the same N-type impurity phosphorus as a substrate is doped to the gate layer in low concentration, and an N<-> gate MOS transistor in which impurity boron of the same type as source-drain is doped so as to surround the N<-> region. When a difference between the drain voltage VN<+>, VN<-> of MOSFETs TN<+>, TN<-> having mutual conductance beta approximately equal to different threshold voltage VTHN<+>, VTHN<-> is taken, a difference between threshold voltage can be extracted. When drain currents or gate length is made large, the difference between threshold voltage is reduced. Gate length is set at an artibrary value, and currents from a constant current source IO are set at an arbitrary value and arbitrary output voltage cn abe obtained. |
