| 摘要 |
PURPOSE:To miniaturize a circuit pattern by providing on the upper and lower faces of a semiconductor wafer with photoresist patterns having apertures whose axes are aligned to the desired position for perforation, and by effecting chemical etching from the both faces. CONSTITUTION:A GaAs wafer 6 is provided on its upper and lower faces with photoresist patterns 7 and 9 having apertures 8 and 10, respectively. The GaAs is selectively etched simultaneously from the upper and lower faces, such that the wafer 6 is provided with a through-hole h2 when the photoresist patterns 7 and 9 are removed. In that case, the apparent angle of inclination theta' with respect to the side wall of the hole h2 perforated in the wafer 6 is equal to 90 deg., and the ratio of magnitudes of the upper and lower apertures A' and B' is equal to 1. |
