| 摘要 |
PURPOSE:To form a film having a uniform thickness with improved step coverage, by holding a semiconductor substrate at an arbitrary angle of 10-80 deg. with respect to the direction of ion flow caused by electron cyclotron resonance plasma. CONSTITUTION:Insulation films 3a and 3b are formed on a semiconductor substrate 1 including a metal wiring layer 2 by means of electron cyclotron resonance plasma. During this process, the substrate 1 is held at an arbitrary angle thetaof 10-80 deg. with respect to the direction of ion flow caused by the plasma thereof, or it is held while the angle is being changed continuously between 10-80 deg.. As a result, the substrate can be prevented from having a shadowed portion from the plasma flow having a tendency to advance straightly. As a result, a film having a uniform thickness with improved step coverage can be obtained.
|
