| 摘要 |
PURPOSE:To improve yield and characteristics of a thin film transistor by manufacturing a self-aligned a-Si FTF without necessity of lifting off an N<+>-a-Si film, thereby sufficiently raising a substrate temperature at the time of depositing the a-Si film. CONSTITUTION:A first insulating film 3, an a-Si semiconductor film 4 and a resist film 6 formed on a second insulating film 5 are stripped off. After it is covered with an N<+>-a-Si film 7 doped with phosphorus by a plasma CVD at 300 deg.C or higher of substrate temperature, a resist film 8 self-aligned with a gate electrode 2 and patterned is formed. A metal film 9 is deposited in the state that the film 8 remains only above the electrode 2. A formed substrate 1 is dipped in a solvent such as acetone, the film 8 is dissolved and removed, and the film 9 above the electrode 2 is simultaneously removed. With the remaining film 9 as a mask the film 7 above the electrode 2 is removed, and a source electrode 10 and a drain electrode 11 are formed in high yield. |
