| 摘要 |
PURPOSE:To improve a film shape against an abrupt step of a semiconductor device by forming a metal wiring layer on the step formed on a semiconductor substrate, and melting the wiring layer. CONSTITUTION:A metal wiring layer 4 is formed on a substrate 1 having steps 2 and 3. A metal wiring layer 4 is thermally melted by heat treatment. The layer 4 is flattened by thermally melting, and the abrupt steps 2, 3 are smoothened. Even if the thickness of the layer 4 is thick, the steps can be readily flattened.
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