| 摘要 |
PURPOSE:To selectively form a region in which a crystal grain boundary does not exist by interposing a thermal conduction control layer which is selectively increased in thickness on a region to be single crystallized between a conductor film and an energy beam absorbing layer to control a heat sink distribution in case of recrystallizing the conductor film. CONSTITUTION:A polycrystalline or amorphous conductor film 2 is formed on an insulating film 1, and a thermal conduction control layer 5 having a region 4 which is selectively increased in the thickness of the film on a region 3 to be formed with a recrystallized conductor film in which a crystal grain boundary does not exist of the film 2 is formed on the film 2. An energy beam absorbing layer 6 is formed on the control layer 5. An energy beam 7 is emitted to the layer 6 to raise the temperature of the layer 6, the film 2 is melted by conduction heat through the layer 5 from the layer 6 to be recrystallized. Since the recrystallization is proceeded from the lowest temperature portion of the center toward the periphery in the lower region of the thick region of the control layer, a recrystallized region in which a crystal grain boundary corresponding to the size of the region does not exist is formed on the lower portion of the thick region of the control layer.
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