| 摘要 |
<p>PURPOSE:To obtain a result of good coverage in a multilayer film when another film is formed on a film by etching from an upper layer to a lower layer, then sidewise etching from the lower layer to the upper layer to eliminate a sawtooth sectional shape. CONSTITUTION:After a resist 1 is patterned, a chromium film 2 is wet etched with a chromium etchant. Then, a silicon nitride film 3 is wet etched with a buffer fluoric acid. An amorphous silicon layer 4 and an n<+> type amorphous silicon layer 5 disposed under the layer 4 are set etched with a mixture solution of fluoric acid, nitride acid and acetic acid, and the extension of the section of the film 3 is removed by sidewise etching with the buffer fluoric acid. Similarly, the extension of the section of the film 2 is removed by sidewisely etching with a chromium etchant. When the resist is eventually separated and patterned by etching, a forward staggered structure thin film transistor is completed.</p> |
