发明名称 LIGHT MEMORY DEVICE USING FERROELECTRIC LIQUID CRYSTAL
摘要 PURPOSE:To clarify a critical electric field more and to enlarge an action margin more by facing a pair of substrates with the surface having the electrode mutually inside and fills a ferroelectric body and a ferroelectric liquid crystal between the electrodes. CONSTITUTION:A plastic substrate, for example, an acrylic resin or a 'Corning 7059(R)' glass substrate 7 is used, on the substrate, aluminum is formed by a vacuum depositing method as one side electrode 6, and as an opposing electrode, a translucent conductive film 4 is formed on a plastic substrate or a glass substrate 3. At the inside of these, non-symmetrical orientation treated layers 5' and 5'' and both are ferroelectric body thin films. As the orientation treated layer, the copolymer with VDF and TrFE is used on the opposing electrode 4 and this is coated by the spinning method. The upper surface of the electrode 6 is the oriented film for which the rubbing treatment is not executed, on other electrode 4, an organic compound ferroelectric body thin film is formed, the rubbing treatment is executed, and during the period, a liquid crystal substance, for example, the blending liquid crystal of S8 and B7 or B8 is filled.
申请公布号 JPS62132248(A) 申请公布日期 1987.06.15
申请号 JP19850271245 申请日期 1985.12.02
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 G11B7/24;G11B7/244;G11B9/00;G11B9/02 主分类号 G11B7/24
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