| 摘要 |
PURPOSE:To largely shorten a measuring time by raising the temperature of a sample before sequentially emitting a light when measuring a deep level in a semiconductor with the light. CONSTITUTION:Since electrons trapped in a deep level 3 are returned to a filling band 1 through multi-phonon discharging step of a cold source 6 by heating a semiconductor sample to raise a temperature, a deep level ionization 4 is released, and an initialization of a measurement of an optical capacitance can be performed. A reflecting mirror 2 is disposed, for example, in cryostat 1 of dark low temperature, and it is controlled to emit heat from an infrared lamp 3 to the sample 4 when becoming a light emitting energy necessary for the initialization. Thus, an electric signal is applied from leads 5 to an external circuit. The source 6 is held in a low temperature state.
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