| 摘要 |
PURPOSE:To improve light absorption efficiency of a long wavelength side of a solar cell and to reduce a plasma damage in an I-N boundary by forming an I-type layer near the N-I boundary of a PIN junction type amorphous solar cell to which a light is projected from a P-type layer side in fine crystal, and increasing the fine crystallinity toward the N-type layer boundary. CONSTITUTION:An I-type layer 20 of a PIN type amorphous solar cell is formed of an a-Si:H, an I-type layer 30 is formed of an a-Si:H+fine crystalline Si layer so that crystallinity is increased toward an N-type layer and a band gap is decreased. An I-type layer 40 is completely finely crystallized. Thus, a long wavelength light can be efficiently absorbed in the region of the layer 30, and is gradually finely crystallined toward the N-type layer. Accordingly, there is no anxiety of plasma damage in the N-I boundary to which large power is abruptly applied. As a method for finely crystallizing the I-type layer fine crystallinity can be increased by feeding SiH4 and H2, gradually increasing he quantity of H2 and gradually raising rf power in a plasma CVD method. |
