发明名称 THIN FILM FIELD EFFECT TRANSISTOR
摘要 <p>PURPOSE:To form a liquid crystal display having good displaying quality which is simply processed in a thin film field effect transistor of a forward staggered structure by forming a light shielding film layer made of an inverting pattern of source and drain electrodes on the back surface of a transparent insulating substrate. CONSTITUTION:A light shielding film layer 9 made of a metal film is formed with a pattern on a glass substrate 1 on which an electrode layer 10 made of a laminate of a transparent electrode layer and an N<+> type amorphous silicon film is formed. Then, the layer 10 is covered with a negative resist layer 11. Subsequently, the substrate 1 is exposed from the light shielding film layer side. With only the layer 9 serving as a mask for the layer 11 the layer 9 is patterned, and the resist 11 shows an original drain and source electrode pattern. Drain and source electrodes 2, 3 are formed. Thus, a thin film field effect transistor of a structure having a light shielding film layer made of an inverting pattern of the source and drain electrodes is formed of two mask patterns.</p>
申请公布号 JPS62132367(A) 申请公布日期 1987.06.15
申请号 JP19850273904 申请日期 1985.12.04
申请人 NEC CORP 发明人 OOTA KENICHI
分类号 H01L29/78;G02F1/136;G02F1/1368;G09F9/00;H01L21/336;H01L27/12;H01L29/786 主分类号 H01L29/78
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