| 摘要 |
PURPOSE:To form a SIMOX of low defect density and high quality by repeating the steps of raising an accelerating voltage of implanting oxygen ions, cooling a substrate, and annealing it whenever the implanting amount arrives at a predetermined level. CONSTITUTION:Oxygen ions are implanted at 100kV or higher of accelerating voltage to a single crystal silicon substrate. The substrate is cooled at this time, and temperature during implanting is maintained at approx. 100 deg.K. When the implanting amount becomes 1X10<15>cm<-2> or more, the substrate is removed from an ion implanting unit, and annealed. The ion implanting and the annealing steps are repeated, and the total implanting amount is set to 5X10<17>cm<-2>. Thereafter, after the substrate surface is cleaned, an epitaxial growth is executed. The defect density of the thus manufactured substrate is 1X10<4>cm<-3> or less, and the improper rate due to the leakage of a device formed on the epitaxial layer is reduced 50% or more than a conventional method.
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