| 摘要 |
PURPOSE:To prevent breakdown at a step part and to form a minute Al wiring, by covering the step part with Al. CONSTITUTION:Photoresist on an oxide film 2, on which an Al wiring is provided, is made to remain. A protruded part 7 of the resist is formed. Al 8 having a thickness d1 is formed on the surface. The protruded part 7 of the resist is removed so that the photoresist 7 is made to remain at a part, on which the Al wiring is to be formed. The photoresist at the other part is removed. The device is made to remain in taper etching liquid. Then the taper etching is performed. A step part is covered with Al 9. Then the photoresist 7 is removed. The desired Al wiring is obtained by using the Al etching technology. Therefore the step part is covered with Al and the Al wiring is formed on the upper part. Thus the breakdown at the step part is prevented, and the discontinuance of the Al wiring does not occur.
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