| 摘要 |
PURPOSE:To converge the entire incident light into a light sensitive part, by forming a V-shaped groove by anisotropic etching, providing the light sensitive part on one surface, providing a wiring part and the like on the other surface, and using the upper surface of the wiring part as a reflecting surface. CONSTITUTION:SiO2 is formed on an Si wafer by thermal oxidation. Then the surface is patterned into a stripe shape. With the pattern as a mask, the Si wafer is etched with etching liquid, and a cross sectional shape is formed. Then, an MOS type solid-state image pickup element is formed on the surface. A photodiode comprising an N-type diffused layer 11 is formed on one side of the slant surfaces. On the other slant surface, an MOS transistor, wherein polysilicon 12 is a gate electrode, SiO2 13 is a gate insulating film and an N<+> layer is a drain 14, is formed. Then, the surface is coated with an insulating film 16. Thereafter, a wiring 15 comprising an Al pattern is formed. The entire surface is covered with a passivation film 17 comprising an SiO2 film. Then, an Al film pattern 18 is formed on the MOS transistor part and the wiring part, and the pattern is used as a reflecting surface. |
