| 摘要 |
PURPOSE:To form a minute electrode pattern simply by using a single resist layer, by coating a dielectric film on a substrate having stepped structure, and selectively performing anisotropic etching of a region including a step part. CONSTITUTION:In a GaAs crystal substrate 1, recess etching is performed. An SiO2 dielectric film 2 is applied on the substrate by a chemical vapor deposition method. Resist 3 is applied on the substrate. A hole is provided in the resist including a step part of the dielectric film 2. With the resist pattern as a mask, the dielectric thin film 2 undergoes reactive ion etching, and a metal electrode 4 is formed by a lift-off method. Thus a recess structure is provided, the length of a gate can be shortened and the distance between a source and a drain can be also shortened.
|
