| 摘要 |
PURPOSE:To form a thinner gold plated layer to reduce cost by a method wherein a primer layer mainly comprising cobalt for gold plated layer, and an alloy plated layer containing phosphor or another alloy plated layer mainly comprising cobalt and phosphor are formed. CONSTITUTION:Within a multilayered ceramic substrate 1 mounting semiconductor, a pad 3A with lead is metallized with high melting point metal on the backside while a diebond pad 3B and a wirebond pad 3C are metallized with high melting point metal on the surface and then a nickel film 4 is formed. Then non-electrolytic Co-P plated film 8 is formed on a nickel plated film 7 covering the nickel film 4. The film 8 is mainly comprising cobalt and phosphor or cobalt added with 2-8wt% of phosphor while the alkali or neutral base Co-P bath is applicable to formation of said film 8. Finally a gold plated film 9 is formed using pure gold plating solution. Through these procedures, the interconnection of ceramic substrate 1 can be formed.
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