| 摘要 |
PURPOSE:To prevent the generation of sub-boundary and to obtain a recrystallized thin film of high crystallization by a method wherein recrystallization is performed in such a manner that the molten semiconductor thin film will be cooled slowly. CONSTITUTION:A semiconductor thin film heating device, which is constituted by arranging a plane-surfaced strip heater 7 in such a manner that is has the angle theta, is used for the substrate 1 which is placed on a fixed heater 2, and the strip heater 7 is moved in parallel with the substrate 1 at the prescribed speed maintaining the prescribed interval with the substrate. The substrate 1 has a quartz plate 5 and a polycrystalline thin film 6, the temperature of silicon after fused goes down drawing a gentle curve 8, the density of generated surface of sub-boundary can by made smaller and a single crystal silicon region, which can be effectively utilized for the formation of elements, can also be made larger. |
