| 摘要 |
PURPOSE:To obtain an element, which is designed for especially low current rectification and has an ideal voltage-current characteristic, by constituting a vertical type field effect transistor and a P-N junction diode in parallel. CONSTITUTION:In the surface part of a semiconductor substrate 6, which is to become a drain region, a P-type first base region 4 is provided. In the base region 4, an N-type source region 5 is provided. A P-type second base region 7 is provided at a part separated from the base region 4. On the base region between the source region 5 and the semiconductor substrate 6, a gate electrode 10 is provided through a gate insulating film 3. The second base region 7 and the semiconductor substrate 6 from a P-N junction diode, and an anode electrode 2 of the second base region 7 is connected to a source region 1. A drain electrode 9 is taken out of a high concentration drain region 8. When a voltage is applied across a source and a drain and the gate voltage is made constant, a channel is formed and a current path is formed. A forward voltage is applied to the P-N junction diode, and current starts flowing out. |
