| 摘要 |
PURPOSE:To obtain a high speed element characterized by high heat resistance property, low gate wiring resistance, small dispersion in performance and good reproducibility, by using Re as a Schottky material of a compound semiconductor. CONSTITUTION:On a semi-insulating GaAs substrate 1, an ion implanting active layer 2 is formed. Then, an Re film 3 is deposited on the substrate 1 by an electron-beam vacuum evaporating method. Thereafter a desired gate pattern 4 comprising photoresist is formed. The Re film 3 is finely machined by a dry etching method. The photoresist layer 4 is removed. With the Re gate electrode 3 as a mask, ions are implanted, and an N<+> layer 5 is formed. Thereafter, the active layer 2 and the N<+> layer 5 are activated by annealing. Finally, source and drain electrodes 6 are formed.
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