| 摘要 |
PURPOSE:To implement a large area, high efficiency and a low cost, by integrating a plurality of cells on an insulating film, which is provided on the surface of a substrate comprising a film forming metal. CONSTITUTION:An insulating film 4 is formed on the entire surface of a substrate 2 by anodic oxidation. A plurality of conductive electrode films 6 are formed on the upper surface of the film 4 by using masks having different sizes. Then, an amorphous silicon film 8 is deposited on the surface part of each film 6 individually. A conductive transparent electrode film 10 is formed so as to cover the surface. An electrode 12 is formed. Thus, a cell group comprising a plurality of cells 14a-14c is constituted. Therefore, the insulating film can be formed simply, and the integration, the large area and the high efficiency of a plurality of the cells can be implemented. |
