| 摘要 |
PURPOSE:To form narrow element isolation regions by a method wherein a groove having an aperture area of an equal width to that of the active region, where a transistor and so on are formed, is formed, the side surfaces of the groove are thermoally oxidized to form the element isolation regions and the groove is filled with a single crystal Si. CONSTITUTION:The desired patterning is performed using a photo resist and thereafter, a PSG layer 6, a nitriding film layer 5, a thermal-oxidized film 4 and a single crystal Si layer 3 are etched by a reactive ion etching method. Exposed single crystal Si layer sidewalls 7 are thermally oxidized to form element isolation regions 8. Then, a buried oxide film layer 2 is etched by a reactive ion etching method and a surface (e) 9 of a single crystal Si substrate 1 is exposed. A selective and epitaxial growth is performed using the surface 9 as a seed, the element isolation regions 8 are buried in a single crystal Si layer and the thermally oxidized film 4 on the surfaces are removed by performing a wet etching.
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