| 摘要 |
PURPOSE:To make the self-bias small as well as causing a uniform and stable plasma between both electrodes by applying a high frequency from both of opposed electrodes in a thin film forming method by glow discharge decomposition of a gas. CONSTITUTION:In a vacuum vessel 1 of a plasma CVD apparatus, a base holder side electrode 2 and a shower electrode 5 connecting to a reaction gas introduc ing tube 6 are provided, and devices each having a matching box 7 and a high- frequency power supply 8 are connected to both electrodes. Therefore, indepen dent applying to these electrodes 2 and 5 with power changing is possible, and each applied power can be controlled so as to zero the difference between the DC bias voltages of both electrodes. Since this enables a uniform plasma to be efficiently generated in the vicinity of a substrate 4 and suppresses the self-bias phenomenon, a thin film which is uniform and has good quality can be formed when the thin film is formed by the plasma CVD method.
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