| 摘要 |
PURPOSE:To prevent missing of wirings due to reaction between wirings and protection nitride film by forming the Al-Si wirings, annealing them at 200-400 deg.C and covering them with the nitride film. CONSTITUTION:A MOSFET is formed on an Si substrate 1, the Al-Si alloy layer is deposited thereon and the patterning is carried out to form the wirings 6. Here, the annealing is carried out in such a degree as recognizing drop of reflectivity at 200-400 deg.C in the H2 atmosphere. In this case, alloy is recrystallized and grain size of crystal is uniformed. Any reaction does not occur even when CVD-Si3N4 7 is deposited thereon. If annealing temperature is too high, alloy spike is generated by generation of alloy between wiring 6 and Si substrate 1 and element characteristic may be deteriorated because such spike passes through the source/drain layer 2. Therefore, said annealing temperature is kept 400 deg.C or less.
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