发明名称 MAGNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To reduce remarkably an N output noise, namely, a switching noise, and to improve a detection efficiency S/N ratio by setting a deviation magnetic field on a chip surface, in a specified direction by basing on a magnetic bubble detector as a reference. CONSTITUTION:As for that which has a deviation magnetic field in the direction in which a rotating magnetic field has advanced by 270 deg. from a conventional magnetic bubble transfer direction, the noise of an N output is the largest. However, in a range of A in which the deviation magnetic field direction is 0 deg.- 90 deg., the noise of the N output becomes very small. Accordingly, according to this invention, said direction is set to a direction in which the rotating magnetic field has advanced by 0 deg.-90 deg. from a magnetic bubble transfer direction in a detector. According to one execution example of a magnetic bubble memory element related to this invention, a deviation magnetic field HDC becomes a direction which has advanced by 90 deg. by a phase of a rotating magnetic field HR against a magnetic bubble transfer direction P in a detector 4a. In this way, the noise of the N output becomes <=1mv.
申请公布号 JPS6074179(A) 申请公布日期 1985.04.26
申请号 JP19830180258 申请日期 1983.09.30
申请人 HITACHI SEISAKUSHO KK 发明人 SEKINO MITSURU;HIROSHIMA MINORU;MATSUMOTO SHINZOU;YANAI MASAHIRO
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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