发明名称 METHOD AND APPARATUS FOR DRY ETCHING
摘要 PURPOSE:To etch all samples including insulators and magnetic materials with good accuracy by etching the sample by the high speed atomic rays released from a neutralizing means in a vacuum vessel connected to a particle ray lead- out port of a cathode case enlosing an anode. CONSTITUTION:A prescribed degree of vacuum is attained in the vacuum vessel 18 and an inert gas or active gas is introduced into the cathode case 8 through an introducing port 6 to attain the prescribed degree of vacuum therein. Glow discharge is generated between the anode 10 and the cathode 9 when the poten tial of the anode 10 is maintained at a higher potential than the cathode 9. The electrons released from the latter are then accelerated toward the former and are bombarded by Barkhausen-Kurz oscillation against the gaseous particles in the case 8, by which plasma is formed. The positive ions therein are accelerat ed and are made incident through the particle ray lead-out port 12 on the neu tralizing means 13 so as to collide against the side wall thereof to form high speed atomic rays which are radiated from the means 13. The chargeable particles therein are deflected by a deflecting electrode 14 and the sample on a stage 15 is sputtered and etched only by the non-chargeable high speed atomic rays.
申请公布号 JPS62130286(A) 申请公布日期 1987.06.12
申请号 JP19850267539 申请日期 1985.11.29
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 KUWANO HIROKI;SHIMOKAWA FUSAO;NAGAI KAZUTOSHI
分类号 C23F4/00;B23K15/00 主分类号 C23F4/00
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