| 摘要 |
PURPOSE:To perform a high speed operation by forming a semiconductor layer with a polycrystalline ZnSe having an orientation to enhance carrier mobility. CONSTITUTION:A gate electrode 22 made of aluminum, an insulating layer 13 made of SiO2 and a ZnSe layer 14 having aligned particle diameter having orientation are formed on a glass substrate 11. Ohmic contacting N<+> type layers 14, 15' are formed on both ends on the layer 14, and covered with main electrodes 16, 16' made of aluminum formed as source and drain electrodes. A ZnSe layer 18 may sometimes be formed between the electrodes 17 and 17' on the substrate 11. With this configuration, since the layers 14, 18 having high mobility are used, carrier mobility of a thin film transistor is increased to operate at a high speed. |
