| 摘要 |
PURPOSE:To enable stable crystal growth by using the laser recrystallization process two times in forming monocrystalline SOI (Silicon On Insulator) Si islands. CONSTITUTION:Dual laser beams B at a predetermined interval are overlapped and directed to a polycrystalline Si layer 3 which is formed on SiO2 2 on a Si substrate 1. By this, a recrystallized layer 3' including a crystal grain boundary A' is obtained. Then, leaving the minute areas, the layer 3' except those is removed, forming minute recrystallized Si islands 3. A polycrystalline Si layer 5 is formed on the SiO2 2 in which the islands 4' were formed. Then, a polycrystalline Si island 5' surrounded with the SiO2 2, 2' is formed from the layer 5. Subsequently, the laser beams B are directed by scanning to wholly recrystallize the island 5', forming recrystallized Si islands 6. Since the minute single crystal Si obtained by the first recrystallization becomes a seed crystal and becomes a definite nucleus for crystal growth, stable crystal growth is accomplished, and thus the SOI islands 6 formed by the above manufacturing method becomes substantially perfect monocrystalline Si islands.
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