| 摘要 |
PURPOSE:To enable a III-V or II-V compound semiconductor layer to be formed on the surface by using a substrate crystal wherein a specific ion seed element is ion-implanted to a specific depth from the surface of a Ge or Si monocrystalline substrate. CONSTITUTION:From the Ge or Si monocrystalline substrate surface, an ion seed element increasing the mean lattice constant of this single crystal by a predetermined amount, e.g., Ge, Sn, In or Sb, is high-energy ion-implanted to the depth of 0.5-5mum. If the depth of the ion implantation is 0.5mum or less, the effect by the ion implantation is insufficient, and if 5mum or greater, the ion implantation energy becomes too large for practical use. On the ion implantation surface of the substrate crystal thus obtained, a III-V or II-V compound semiconductor layer is epitaxially grown. As described above, by ion-implanting an element such as properly increasing the lattice constant of the substrate crystal, the lattice alignment with the III-V or II-V compound semiconductor layer can be improved.
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