| 摘要 |
1283769 Semi-conductor devices HITACHI Ltd 8 Oct 1969 [9 Oct 1968 7 July 1969] 49538/69 Heading HlK A semi-conductor device comprises a passivation film 34 of 5i0 2 deposited on a substrate 30 to a thickness of 300 to 3000 A, and two or more insulating layers 35, 36, each of thickness 300 to 1500 A deposited on the film 34 in order to control the surface charges on the substrate 30. It is stated that charges, of opposite type to the surface charges induced by the SiO 2 film 34 on the substrate, are generated at the interfaces of adjacent insulating' layers, and thus the number of the layers can be used to control these surface charges. The substrate may contain P and N type regions and have electrodes 37 connected to these regions. The insulating layers may be of silicon dioxide, silicon nitride, boro-silicate glass, phospho-silicate glass, alumina, alumino-silicate glass, alumino-borosilicate glass or alumino-phospho-silicate glass. The substrate may be Si, Ge, GaAs, InSb, InP. |
