| 摘要 |
PURPOSE:To prevent the falling of a single crystal when lifted and to improve the yield by immersing the whole seed crystal in a sealant layer until seeding is started after the sealant is melted in the title method for growing a III-V compd. single crystal by a low-temp. gradient liq. capsule pulling method. CONSTITUTION:The sealant and the raw material of III-V compd. polycrystals, etc., are charged in a crucible 2, a seed crystal is attached to a lifting shaft 5, and the inside of an airtight vessel 1 is replaced by an inert gas and pressurized to a desired pressure. Then the sealant and the polycrystals are melted by a heater 3, and a sealant layer 13 and the melt 12 of the III-V compd. are formed. Seeding is carried out and the lifting of a single crystal is started while rotating the crucible 2 and the lifting shaft. The whole seed crystal is immersed in the sealant layer until the seeding is started after the sealant is melted. Consequently, the seed crystal is never exposed to the high-temp. inert gas atmosphere, the vaporization of the III-V compd. from the seed crystal can be controlled, hence the falling of the single crystal during lifting due to the damage of the single crystal can be prevented, and the yield of single crystals is improved.
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