| 发明名称 |
THIN FILM CAPACITOR WITH DUAL BOTTOM ELECTRODE |
| 摘要 |
A thin film capacitor having a dual bottom electrode is provided. The bottom electrode comprises a first layer of metal and a second layer of platinum, said metal of the first layer being of the nature of forming a stable intermetallic phase with the platinum during heat treatment. The metal of the first layer is typically selected from the group consisting of Hf, Zr, and Ta. The thin film capacitor is suitable for the decoupling capacitor of VLSI. |
| 申请公布号 |
DE3276277(D1) |
申请公布日期 |
1987.06.11 |
| 申请号 |
DE19823276277 |
申请日期 |
1982.08.10 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HOWARD, JAMES KENT;SRIKRISHNAN, KRIS VENKATRAMAN |
| 分类号 |
H01L27/04;H01G4/005;H01G4/008;H01G4/08;H01G4/33;H01L21/28;H01L21/822;H01L21/8242;H01L21/8246;H01L27/01;H01L27/105;H01L27/108;H01L29/43;H01L29/92;(IPC1-7):H01G1/01 |
主分类号 |
H01L27/04 |
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