| 摘要 |
A new semiconductive material includes a suitable polymer or blend of polymers and a carbon black material in an amount of 4% to 25% based on the total weight of the semiconductive material, having a relatively low reticulate structure; and being essentially non-chemically surface-treated (having essentially a non-oxidized surface) such that the pH of the carbon black is at least 4.0, and generally about 5.0 to 8.5. These non-surface treated carbon blacks generally have a dry volatile content of about 3.0 or less and usually 2.5 or less. The particular carbon blacks suitable for the semiconductive materials of the invention are essentially non-surface treated, have a midrange value for dry volume resistivity, and have a nitrogen surface area A in m<2>/g greater than or equal to 1.75 x + e<x/37> where x is the DBP absorption of the carbon black in cm<3>/100 grams. Such carbon blacks decrease the annealing times needed to less than about 3 minutes, and generally in the time period of less than 1 minute. |
