| 摘要 |
PURPOSE:To manufacture a BIC cell, breakdown voltage thereof is constant and low and which can write easily and stably with high reliability, by forming an insulating film covering a contact-hole for the BIC cell by the composite film of an silicon nitride film and an SiO2 film. CONSTITUTION:A contact hole formed to a first insulating film 13 on a substrate 11 for taking a contact with an N<+> type region 12 shaped to a P-type silicon substrate 11 is coated with a composite film 23 as a second insulating film consisting of an silicon nitride film 21 and an SiO2 film 22, and an electrode wiring 15 composed of a material such as Al is shaped onto the composite film 23. A device shown in the figure represents a BIC cell generating the dielectric breakdown of the composite film 23 for conduction, and predetermined voltage is applied to the electrode wiring 15 in the same manner as conventional examples and the composite film 23 is dielectrically broken down and brought to a conductive state or the composite film 23 is kept under a non-conductive state without dielectric breakdown. A resistance value after the dielectric breakdown of the composite film 23 is lowered sufficiently as 500OMEGA, breakdown voltage is reduced as 18V, and the degree of breakdown voltage distribution can also be kept within + or -1V. |
