| 摘要 |
PURPOSE:To improve the utilization rate of a material, to enhance the quality of a growing crystal and to elevate the operating efficiency of equipment by ionizing molecular beams between a molecular beam source and a crystal substrate and deflecting ionized molecular beams. CONSTITUTION:Most of molecular beams 2 are ionized when they pass through an ionizer 3, and they are deflected from the direction of radiation that a deflector 4 originally has the same time s ionization. Consequently, molecular beams 2 passing through the ionizer 3 and the deflector 4 uniformly deposit on the whole surface of a substrate crystal on an average. Consequently, a growth film having the high uniformity of film thickness is obtained, the uniformity of the quantity of molecular beams can be acquired on the substrate crystal even when the directivity of molecular beams is large, and molecular beams can be utilized in the direction that the quantity of molecular beams can be utilized in the direction that the quantity of molecular beams is maximized. A device in which a heater is used or a device 23 in which a high-frequency electromagnetic field is utilized is employed s the ionizer. A device in which an AC electric field is used or a device in which an AC magnetic field is utilized or the like is employed as the deflector.
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