| 摘要 |
A semiconductor device comprising a substrate layer (11) of a first conductivity type, an epitaxial layer (13) of a second conductivity type overlying said substrate layer (11), and an insulating layer (16) covering at least a portion of said epitaxial layer (13). According to the invention, a passivating layer (17) having a high dieletric constant, at least ten times higher than that of silicon-dioxide, is present on said insulating layer (16). |
