| 摘要 |
PURPOSE:To realize a two-terminal negative resistance operation or a transistor operation by utilizing the resonance effect of quantum levels formed in two semiconductor regions of a hetero-junction. CONSTITUTION:Ohmic contacts are provided (non-doped InAs and non-doped GaSb or N-type doped InAs and P-type doped GaSb as shown in the figure may be employed) on the respective accumulated layers 2DEG and 2DHG of electrons and positive holes shown in the energy band diagram of a diode. If a bias voltage is applied by an external source VB so as to make the 2nd semiconductor GaSb side, which has a smaller work function, positive and the 1st semiconductor InAs side, which has a larger work function, negative, when the quantum levels of electrons coincide with each other with a suitable bias (when voltages V1 and V2 are applied), a current is induced in accordance with a certain transition probability. The negative resistance type characteristics as shown by the figure can be obtained. |
